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1、锂电池保护芯片正常状(zhuang)态

当锂电(dian)(dian)池(chi)所(suo)有电(dian)(dian)压(ya)在(zai)(zai)过充(chong)检测(ce)(ce)电(dian)(dian)压(ya)(Voc)和过放电(dian)(dian)检测(ce)(ce)电(dian)(dian)压(ya)(Vod)之(zhi)间，VINI端电(dian)(dian)压(ya)在(zai)(zai)过流检测(ce)(ce)电(dian)(dian)压(ya)(Vec1)和异常充(chong)电(dian)(dian)检测(ce)(ce)电(dian)(dian)压(ya)(Vabc)之(zhi)间时，电(dian)(dian)池(chi)处(chu)于正常工作状态。

2、锂电池保(bao)护芯片过充(chong)状(zhuang)态(tai)

在锂电池(chi)(chi)保(bao)(bao)护芯片正常状(zhuang)态(tai)下，如果任何(he)电池(chi)(chi)电压高于(yu)过充(chong)检测电压(Voc)，超过过充(chong)保(bao)(bao)护延(yan)时(shi)时(shi)间(Toc)， CO输出高阻状(zhuang)态(tai)关闭充(chong)电MOSFET，电池(chi)(chi)进入过充(chong)保(bao)(bao)护状(zhuang)态(tai)。

在过(guo)充保护延时(shi)时(shi)间(Toc)中，当检(jian)测(ce)到的(de)(de)(de)电(dian)(dian)池电(dian)(dian)压低于(yu)过(guo)充检(jian)测(ce)电(dian)(dian)压(Voc)的(de)(de)(de)时(shi)间超(chao)过(guo)过(guo)充复位延时(shi)时(shi)间(Treset)时(shi)，累(lei)计的(de)(de)(de)过(guo)充延时(shi)时(shi)间(Toc)将被复位。否则，电(dian)(dian)池电(dian)(dian)压下降被认为是(shi)不相(xiang)关的(de)(de)(de)干(gan)扰，并(bing)被屏蔽(bi)。

3、锂电(dian)(dian)池保(bao)护芯片过充保(bao)护放电(dian)(dian)条件

（1）电(dian)(dian)池电(dian)(dian)压(ya)低(di)于过充释(shi)放(fang)电(dian)(dian)压(ya)(Vocr)且超过过充释(shi)放(fang)延时(Tocr)；

（2）VM端电(dian)压(ya)大(da)于负载检(jian)测电(dian)压(ya)(Vload)且电(dian)池电(dian)压(ya)低(di)于过充检(jian)测电(dian)压(ya)(Voc)。

4、锂电保护(hu)芯(xin)片(pian)过放电状态

在正常状(zhuang)态(tai)下(空载状(zhuang)态(tai))，如(ru)果任一电(dian)(dian)池(chi)电(dian)(dian)压低于过(guo)放(fang)(fang)电(dian)(dian)保(bao)护电(dian)(dian)压Vod，超过(guo)过(guo)放(fang)(fang)电(dian)(dian)保(bao)护延(yan)时时间Tod，DO输(shu)出低电(dian)(dian)平(ping)关断放(fang)(fang)电(dian)(dian)MOSFET，电(dian)(dian)池(chi)进入过(guo)放(fang)(fang)电(dian)(dian)保(bao)护状(zhuang)态(tai)。

5、锂(li)电池(chi)保护芯片温度保护

NTC电(dian)(dian)阻(zu)的电(dian)(dian)阻(zu)值随着温度的变化而变化。如果RCOT和RDOT检测到的电(dian)(dian)压达(da)到内部比较阈值，并且保持(chi)Tcot/Tdot时间，则会(hui)触发充(chong)电(dian)(dian)过(guo)温保护(hu)和放(fang)(fang)电(dian)(dian)过(guo)温保护(hu)。充(chong)电(dian)(dian)过(guo)温保护(hu)后，充(chong)电(dian)(dian)MOSFET关(guan)断(duan)，放(fang)(fang)电(dian)(dian)MOSFET打开；放(fang)(fang)电(dian)(dian)过(guo)温保护(hu)后，充(chong)放(fang)(fang)电(dian)(dian)MOSFET同时关(guan)断(duan)。