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光(guang)(guang)可以分(fen)为(wei)不同(tong)的波长，我(wo)们可以透过彩虹看(kan)到(dao)(dao)。由于(yu)入射(she)到(dao)(dao)电(dian)(dian)池(chi)上的光(guang)(guang)的光(guang)(guang)子能(neng)(neng)量范(fan)围(wei)非(fei)(fei)常宽，一些光(guang)(guang)子没有足够的能(neng)(neng)量来(lai)形(xing)成(cheng)电(dian)(dian)子-空(kong)穴对。它们只是(shi)穿(chuan)过电(dian)(dian)池(chi)，就像电(dian)(dian)池(chi)是(shi)透明(ming)的一样。但(dan)其他(ta)一些光(guang)(guang)子非(fei)(fei)常有能(neng)(neng)量。只有当达到(dao)(dao)一定的能(neng)(neng)量（电(dian)(dian)子伏特（eV），这取(qu)决(jue)于(yu)电(dian)(dian)池(chi)材料（约(yue)1.1eV的晶(jing)体硅））时，电(dian)(dian)子才能(neng)(neng)逃逸。我(wo)们称这个(ge)能(neng)(neng)量值为(wei)材料的带隙(xi)能(neng)(neng)量。如(ru)果(guo)光(guang)(guang)子的能(neng)(neng)量大于(yu)所(suo)需的能(neng)(neng)量，则(ze)多余的能(neng)(neng)量将丢(diu)失（除(chu)非(fei)(fei)光(guang)(guang)子的能(neng)(neng)量是(shi)所(suo)需能(neng)(neng)量的两(liang)倍，这可以产生多个(ge)电(dian)(dian)子-空(kong)穴对，但(dan)这种效应并(bing)不重(zhong)要）。仅这两(liang)种效应将导致电(dian)(dian)池(chi)中(zhong)约(yue)70%的辐射(she)能(neng)(neng)量损失。

为(wei)(wei)了(le)使用(yong)更多的(de)光子(zi)，我们为(wei)(wei)什么不选择一种带隙非常低的(de)材料呢？不幸(xing)的(de)是，带隙也(ye)决(jue)定(ding)了(le)电(dian)(dian)场强度(du)（电(dian)(dian)压(ya)）。如果(guo)带隙太低，在增加电(dian)(dian)流(liu)（通过吸收(shou)更多电(dian)(dian)子(zi)）的(de)同时，会损失(shi)一定(ding)的(de)电(dian)(dian)压(ya)。记住，功率(lv)是电(dian)(dian)压(ya)和电(dian)(dian)流(liu)的(de)乘积(ji)。佳带隙能量必(bi)须能够平衡(heng)这(zhei)两种效(xiao)应。对于由单一材料制(zhi)成(cheng)的(de)电(dian)(dian)池，该值约为(wei)(wei)1.4电(dian)(dian)子(zi)伏特。

我(wo)们还有(you)其他(ta)能量损失(shi)。电(dian)(dian)子(zi)必须(xu)通过外部(bu)(bu)电(dian)(dian)路从(cong)电(dian)(dian)池(chi)的(de)(de)一(yi)侧流(liu)向另一(yi)侧。我(wo)们可以(yi)在电(dian)(dian)池(chi)底部(bu)(bu)镀上一(yi)层金(jin)(jin)属(shu)，以(yi)确保良好(hao)的(de)(de)导电(dian)(dian)性。然而(er)，如果我(wo)们用(yong)(yong)金(jin)(jin)属(shu)完全覆(fu)盖(gai)电(dian)(dian)池(chi)顶(ding)部(bu)(bu)，光子(zi)将无(wu)法通过不透(tou)明(ming)导体，从(cong)而(er)失(shi)去所有(you)电(dian)(dian)流(liu)（在某些(xie)电(dian)(dian)池(chi)中，透(tou)明(ming)导体仅(jin)在顶(ding)部(bu)(bu)表(biao)面使(shi)用(yong)(yong)，而(er)不是(shi)在所有(you)位置(zhi)）。如果我(wo)们只在电(dian)(dian)池(chi)的(de)(de)两侧设(she)置(zhi)触点，电(dian)(dian)子(zi)需要经过很长(zhang)的(de)(de)距(ju)离才能到达触点。要知(zhi)道，硅是(shi)一(yi)种半导体，它的(de)(de)电(dian)(dian)流(liu)传输(shu)性能不如金(jin)(jin)属(shu)。其内部(bu)(bu)电(dian)(dian)阻（称为串联电(dian)(dian)阻）相当(dang)高(gao)，高(gao)电(dian)(dian)阻意味着(zhe)高(gao)损耗(hao)。为了大(da)限度地(di)减(jian)少(shao)这些(xie)损失(shi)，电(dian)(dian)池(chi)被(bei)金(jin)(jin)属(shu)接触网覆(fu)盖(gai)，这可以(yi)缩短(duan)电(dian)(dian)子(zi)移动(dong)的(de)(de)距(ju)离，只覆(fu)盖(gai)电(dian)(dian)池(chi)表(biao)面的(de)(de)一(yi)小部(bu)(bu)分(fen)。即使(shi)如此，一(yi)些(xie)光子(zi)也会(hui)(hui)被(bei)网格阻挡。电(dian)(dian)网不能太(tai)小，否则其电(dian)(dian)阻会(hui)(hui)太(tai)高(gao)。

在实际(ji)使(shi)用(yong)电(dian)池之前(qian)，还(hai)需要采取其他几个步骤。硅是一种有光泽的(de)(de)材料，这意味着它具有良(liang)好(hao)的(de)(de)反(fan)射财产(chan)。反(fan)射的(de)(de)光子不(bu)能(neng)被电(dian)池使(shi)用(yong)。因此，电(dian)池顶部的(de)(de)抗(kang)反(fan)射涂层可以(yi)(yi)将反(fan)射损耗(hao)降(jiang)低(di)到5%以(yi)(yi)下。